SECOND HARMONICS GENERATOR

• Main Author: KAWANAMI HIROSHI
• Format: Patent
• Language: English
• Published: 11.06.1993
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE:To form a good interface and achieve the optical coupling with least loss by forming a nonlinear optical coupling portion grown in a lateral direction by giving a synchronous structure by an index of refraction on a beam emitting end face of a semiconductor laser portion and a semiconductor laser portion formed on a semiconductor substrate of III-V group compounds. CONSTITUTION:Selective epitaxial growth is made under a high temperature and a low arsenic pressure where a growth occurs on (111) B surface. Materials used are trimethyl gallium and trimethyl aluminum for group III elements and AsH3 for V group elements. Also, as n-type dopant, dimethyl zinc is used. After forming the semiconductor laser portion on (111) B surface n-type GaAs substrate 101, the semiconductor portion 108 of II-IV compounds is grown in a lateral direction on the side face 110 surface of semiconductor section as a light-emitting face of the semiconductor laser portion by the MOVPE method. A reflecting mirror 109 for reflecting 100% of fundamental wave and second harmonics and a reflecting mirror 110 reflecting 100% of fundamental wave only are formed.