INSULATING GATE TYPE BIPOLAR TRANSISTOR
PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
22.01.1993
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base layer 1, and to one electrode 8 of a diode formed by a pn junction therebetween is applied electrode in contact with that region and connected with that region and an electrode in contact with a buffer layer 2 of the same conductivity type as that adjoining to the base layer 1 and also in contact with a collector layer 3 and further short- circuited with that is applied to the other electrode, and hereby a current regeneration diode connected with the emitter electrode 8 and with a collector electrode 9 is yielded. |
|---|---|
| AbstractList | PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base layer 1, and to one electrode 8 of a diode formed by a pn junction therebetween is applied electrode in contact with that region and connected with that region and an electrode in contact with a buffer layer 2 of the same conductivity type as that adjoining to the base layer 1 and also in contact with a collector layer 3 and further short- circuited with that is applied to the other electrode, and hereby a current regeneration diode connected with the emitter electrode 8 and with a collector electrode 9 is yielded. |
| Author | SAITO TATSU |
| Author_xml | – fullname: SAITO TATSU |
| BookMark | eNrjYmDJy89L5WRQ9_QLDvVxDPH0c1dwdwxxVQiJDHBVcPIM8PdxDFIICXL0C_YMDvEP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgamhsbmZhaOxkQoAQCk4CWr |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | JPH0513768A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_JPH0513768A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 12:19:34 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_JPH0513768A3 |
| Notes | Application Number: JP19910166043 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930122&DB=EPODOC&CC=JP&NR=H0513768A |
| ParticipantIDs | epo_espacenet_JPH0513768A |
| PublicationCentury | 1900 |
| PublicationDate | 19930122 |
| PublicationDateYYYYMMDD | 1993-01-22 |
| PublicationDate_xml | – month: 01 year: 1993 text: 19930122 day: 22 |
| PublicationDecade | 1990 |
| PublicationYear | 1993 |
| RelatedCompanies | FUJI ELECTRIC CO LTD |
| RelatedCompanies_xml | – name: FUJI ELECTRIC CO LTD |
| Score | 2.422627 |
| Snippet | PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | INSULATING GATE TYPE BIPOLAR TRANSISTOR |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930122&DB=EPODOC&locale=&CC=JP&NR=H0513768A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3JTsMwEB2VgoAbFBBlkw8onCKyODU5RChN0iVqkyh1UTlVWRypl1LRIH6fSWgLF7hZtjRe5OfxeOaNAe47RarkLM9kgeaFTFVqyGbBdFlLqciZYIqpVWzkcdAZTKk_M2YNWGy5MHWe0M86OSIiKkO8l_V5vfp5xHLr2Mr1Y7rAqrfnHrdcKd_QxfTKUyS5XcuLQjd0JMex_EgKYmuAmw-x9GTvwT7eolkFBu-lW5FSVr81Su8EDiIUtixPoSGWLThyth-vteBwvPF3Y3EDvfUZPKCZPR3ZfBj0Sd_mHuGvkUe6wygc2THhsR1MhhMexudAeh53BjL2ON_Nbu5Hu7HpF9BEo19cAlH0ggojS4uMMpqoualTliVorWWKWRQJa0P7TzFX_7Rdw_F3yJ4qa9oNNMv3D3GLarVM7-oF-QI-Tnj1 |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH-Z0zhvOjXOTw4GT0QG3SoHYhiwwWRAWGe2ExlQkl3m4jD--z5wm1701KZNXj_SX19-fR8FuO_miZzRLJU40guJtElH0nKqSkpCeEY5lTWljEYe-V1nQobTzrQGi20sTJUn9LNKjoiIShHvRXVfr34esazKt3L9mCyw6e25z3RLzDbhYmppKRKtnm6HgRWYomnqw1D0I93Bw4dYejL2YB8LWoLBfu2VQSmr3xqlfwwHIQpbFidQ48smNMztx2tNOBxt7N1Y3UBvfQoPSLMnnsFcfyAMDGYLbBbaQs8NA8-IBBYZ_tgdsyA6A6FvM9ORcMR4t7p4GO7mpp5DHUk_vwBBVnPCO2mSp4SSeTvTVELTObK1VNbyfE5b0PpTzOU_fXfQcNjIiz3Xf7mCo2_3vbakKNdQL94_-A2q2CK5rTbnCxTHe-g |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=INSULATING+GATE+TYPE+BIPOLAR+TRANSISTOR&rft.inventor=SAITO+TATSU&rft.date=1993-01-22&rft.externalDBID=A&rft.externalDocID=JPH0513768A |