INSULATING GATE TYPE BIPOLAR TRANSISTOR

PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base...

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Bibliographic Details
Main Author SAITO TATSU
Format Patent
LanguageEnglish
Published 22.01.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To build a current regeneration diode connected reversely parallelly between an emitter electrode and a collector electrode in the same semiconductor device as an IGBT body. CONSTITUTION:A region of the same conductivity type as that of a channel region is formed on a surface layer of a base layer 1, and to one electrode 8 of a diode formed by a pn junction therebetween is applied electrode in contact with that region and connected with that region and an electrode in contact with a buffer layer 2 of the same conductivity type as that adjoining to the base layer 1 and also in contact with a collector layer 3 and further short- circuited with that is applied to the other electrode, and hereby a current regeneration diode connected with the emitter electrode 8 and with a collector electrode 9 is yielded.
Bibliography:Application Number: JP19910166043