LIQUID MATERIAL VAPORIZER

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 28.05.1993
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SEPARATION; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

PURPOSE:To stably supply a vaporized liq. material to a chemical vapor deposition device by supplying the flow-controlled liq. material for chemical vapor deposition into a casing, atomizing the material by ultrasonic vibration, further heating and vaporizing the material. CONSTITUTION:An inert gas such as He is supplied from a cylinder 2 to an ampule 1 contg. a liq. material used in chemical vapor deposition (CVD) method to pressurizing the material, the flow rate is fixed by a liq. flow rate controller 3, and the material is supplied into a casing 9. The material is atomized by an ultrasonic vibrator 4 in the casing 9 into fine droplets, and the droplet is then heated by a heater 5. The vaporized material kept at a constant temp. is supplied to the vacuum treating device for CVD by the inert gas such as Ar or reactive gas such as O2 supplied from a cylinder 7 through a flow rate controller 6 in a fixed amt., and a chemical vapor growth reaction is stably conducted.