THIN FILM THERMAL HEAD AND ITS MANUFACTURE
PURPOSE:To prevent unevenness of an electric resistance value of a heating element from occurring for each manufacturing lot by a method wherein the heating element is composed of a lower layer and an upper layer laminated on the lower layer, and an area resistance value of the lower layer is made l...
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Main Author | |
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Format | Patent |
Language | English |
Published |
23.03.1992
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To prevent unevenness of an electric resistance value of a heating element from occurring for each manufacturing lot by a method wherein the heating element is composed of a lower layer and an upper layer laminated on the lower layer, and an area resistance value of the lower layer is made larger than that of the upper layer. CONSTITUTION:Sputtering of a lower layer 3a is performed by using a Ta-SiO2 target, an Ar (pressure 6X10<-1>Pa) sputtering gas, and 1.6kW RF power. Besides, sputtering of an upper layer is performed on the lower layer 3a by using a target of Ta-SiO2 of all the same material and composition ratio as for the lower layer 3a, an Ar (pressure 1X10<-1>Pa) sputtering gas, and 1.6kW RF power. Further, a plurality of specific formed heating elements 3 are formed by etching or the like in that case. When films of the lower layer 3a and the upper layer 3b are formed by those conditions, specific resistance of the lower layer 3a becomes approx. 60mOMEGA-cm, and specific resistance of the upper layer becomes approx. 30mOMEGA-cm. Therefore, the area resistance value of the lower layer 3b becomes approx. 10 times that of the upper layer 3b. When a thermal head is driven, 90% or over of said making power is consumed by the upper layer 3b. |
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Bibliography: | Application Number: JP19900204469 |