DRY ETCHING METHOD

PURPOSE:To eliminate irregularity in etching speed and to enhance the quality of a specimen by a method wherein a gas which does not adhere to the inner wall of an etching chamber by its property or an etching gas for the specimen is supplied into the etching chamber, a warming-up distance is execut...

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Bibliographic Details
Main Author KASE MASA
Format Patent
LanguageEnglish
Published 19.03.1992
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To eliminate irregularity in etching speed and to enhance the quality of a specimen by a method wherein a gas which does not adhere to the inner wall of an etching chamber by its property or an etching gas for the specimen is supplied into the etching chamber, a warming-up distance is executed, the temperature of the etching chamber is raised to nearly the same temperature as that of an etching operation of a plurality of specimens and the etching operation is executed. CONSTITUTION:A gas which does not adhere to the inside of an etching chamber 12, e.g. sulfur hexafluoride (SF6), is introduced; a part of the introduced SF6 is evacuated from a gas evacuation tube 17; an internal pressure is kept definite. Microwave electric power is supplied to the etching chamber 12 from a magnetron 14; a warming-up distance is executed for 10 to 15 minutes; the temperature of the etching chamber 12 is raised. Then, the SF6 gas is evacuated quickly; a specimen (wafer) 30 is placed on a specimen electrode 18. After that, a polycrystalline silicon film is etched under the same condition as the warming-up discharge. In addition, polycrystalline silicon films formed on a plurality of wafers 30 are etched continuously under the same etching condition.
Bibliography:Application Number: JP19900202806