SEMICONDUCTOR DEVICE

PURPOSE:To make a stable ohmic resistor and an accurate semiconductor device not affected by fluctuation in manufacture by removing a sidewall spacer used to form an LDD structure in a shared contact and making a sheared contact in that section. CONSTITUTION:A shared contact hole in an insulating fi...

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Bibliographic Details
Main Author HATASAKO KENICHI
Format Patent
LanguageEnglish
Published 28.02.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To make a stable ohmic resistor and an accurate semiconductor device not affected by fluctuation in manufacture by removing a sidewall spacer used to form an LDD structure in a shared contact and making a sheared contact in that section. CONSTITUTION:A shared contact hole in an insulating film 6 exposes first polysilicon 3, an N<+> diffusion layer 4, and a sidewall spacer from the hole. Etching with buffered HF(BHF) liquid after the shared contact hole is made removes the sidewall spacer. When second polysilicon 7 is formed after that, a semiconductor device having an accurate low-resistance sheared contact is easily made. Thereby a sufficient margin for fluctuation in manufacture is ensured.
Bibliography:Application Number: JP19900178010