JPH0446474B
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels (7,7') for the device, a differential etch rate In a free-etch can be effected to remove only sel...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
30.07.1992
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels (7,7') for the device, a differential etch rate In a free-etch can be effected to remove only selected portions of the top layer (9) and to provide self-alignment in the metallization process. |
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| AbstractList | A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels (7,7') for the device, a differential etch rate In a free-etch can be effected to remove only selected portions of the top layer (9) and to provide self-alignment in the metallization process. |
| Author | DONARUDO ERUTON AKUREI REINHAATO DABURYUU EICHI ENGERUMAN TERUKO KOBAYASHI INOE |
| Author_xml | – fullname: TERUKO KOBAYASHI INOE – fullname: DONARUDO ERUTON AKUREI – fullname: REINHAATO DABURYUU EICHI ENGERUMAN |
| BookMark | eNrjYmDJy89L5WTg9grwMDAxMTMxN3HiYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxSDqcjIyJUgQANrgeCQ |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | JPH0446474BB2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_JPH0446474BB23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 15:23:02 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_JPH0446474BB23 |
| Notes | Application Number: JP19840167699 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920730&DB=EPODOC&CC=JP&NR=H0446474B2 |
| ParticipantIDs | epo_espacenet_JPH0446474BB2 |
| PublicationCentury | 1900 |
| PublicationDate | 19920730 |
| PublicationDateYYYYMMDD | 1992-07-30 |
| PublicationDate_xml | – month: 07 year: 1992 text: 19920730 day: 30 |
| PublicationDecade | 1990 |
| PublicationYear | 1992 |
| RelatedCompanies | HEWLETT PACKARD CO |
| RelatedCompanies_xml | – name: HEWLETT PACKARD CO |
| Score | 2.4181755 |
| Snippet | A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | JPH0446474B |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920730&DB=EPODOC&locale=&CC=JP&NR=H0446474B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQCdQWZpkaabaGJprAs6n0TXwswsRdfA2CQp2cI01SLVBLQ52dfPzCPUxCvCNIKJIQu2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqopUC3ixmBUqyai5Ota4C_i7-zmrOzrVeAml-QrQdo4tLE3MQJWFyzApvR5qDc4BrmBNqVUoBcpbgJMrAFAE3LKxFiYErNE2bgdIbdvCbMwOELnfAGMqF5r1iEgdsrAG68KIOSm2uIs4cu0NR4uBfikVQ4GRmLMbAA-_apEgwKqWaGSamJFknAZhZQOtXUItUiMTXR0tww0TI1LcnMSJJBGo9BUnhlpRm4YGtLjQ1kGFhKikpTZYE1aEmSHNjrALYVcWc |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsQCdQWZpkaabaGJprAs6n0TXwswsRdfA2CQp2cI01SLVBLQ52dfPzCPUxCvCNIKJIQu2FwZ8Tmg5-HBEYI5KBub3EnB5XYAYxHIBr60s1k_KBArl27uF2LqopUC3ixmBUqyai5Ota4C_i7-zmrOzrVeAml-QrQdo4tLE3MQJWFyzApvY5qDc4BrmBNqVUoBcpbgJMrAFAE3LKxFiYErNE2bgdIbdvCbMwOELnfAGMqF5r1iEgdsrAG68KIOSm2uIs4cu0NR4uBfikVQ4GRmLMbAA-_apEgwKqWaGSamJFknAZhZQOtXUItUiMTXR0tww0TI1LcnMSJJBGo9BUnhl5Rk4PUJ8feJ9PP28pRm4YOtMjQ1kGFhKikpTZYG1aUmSHDgYADDwdFo |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=JPH0446474B&rft.inventor=TERUKO+KOBAYASHI+INOE&rft.inventor=DONARUDO+ERUTON+AKUREI&rft.inventor=REINHAATO+DABURYUU+EICHI+ENGERUMAN&rft.date=1992-07-30&rft.externalDBID=B2&rft.externalDocID=JPH0446474BB2 |