JPH0446474B

A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels (7,7') for the device, a differential etch rate In a free-etch can be effected to remove only sel...

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Bibliographic Details
Main Authors TERUKO KOBAYASHI INOE, DONARUDO ERUTON AKUREI, REINHAATO DABURYUU EICHI ENGERUMAN
Format Patent
LanguageEnglish
Published 30.07.1992
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels (7,7') for the device, a differential etch rate In a free-etch can be effected to remove only selected portions of the top layer (9) and to provide self-alignment in the metallization process.
Bibliography:Application Number: JP19840167699