SEMICONDUCTOR MATERIAL OF LIGHT EMITTING ELEMENT PROVIDED WITH DISTORTED ACTIVE LAYER

PURPOSE:To enable a light emitting element to be kept high in characteristics and to emit pure green light of high intensity. CONSTITUTION:A GaP clad layer 2, a GaInP single distorted quantum well type active layer 3, and a GaP clad layer 4 are successively grown on a GaP substrate 1. The active lay...

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Main Authors TADATOMO KAZUYUKI, WATABE SHINICHI, TOYAMA OSAMU, MAEDA SHIGEO
Format Patent
LanguageEnglish
Published 22.12.1992
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable a light emitting element to be kept high in characteristics and to emit pure green light of high intensity. CONSTITUTION:A GaP clad layer 2, a GaInP single distorted quantum well type active layer 3, and a GaP clad layer 4 are successively grown on a GaP substrate 1. The active layer 3 is controlled in mixed crystal ratio and thickness by the effect of the distorted quantum well (formation of quantum well level), whereby light emitted from the layer 3 can be controlled in wavelength. As a light emitting element of this design is very simple in structure, it can be simplified in manufacturing process, and as a result it can be improved in mass- productivity and profitability. As Al is not required, the element concerned is sharply improved in moisture resistance.
Bibliography:Application Number: JP19910246758