ION ETCHING DEVICE

PURPOSE:To omni-circumferentially change an ion beam radiating direction without mechanical rotation of a sample in an ion etching device by which the ion beam can be radiated slantly to the sample. CONSTITUTION:An ion etching device is constructed in such a manner that vertically two-stage type def...

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Bibliographic Details
Main Author ZENITANI FUKUO
Format Patent
LanguageEnglish
Published 27.11.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:PURPOSE:To omni-circumferentially change an ion beam radiating direction without mechanical rotation of a sample in an ion etching device by which the ion beam can be radiated slantly to the sample. CONSTITUTION:An ion etching device is constructed in such a manner that vertically two-stage type deflecting means 5, 6 which deflection ion beams are arranged in the device, then an upper-stage deflecting means is used to deflect an ion beam in any direction while the lower-stage deflecting means is used to deflect the ion beam in its reflective direction so that the ion beam may be radiated to one point (0) on the surface of a sample 2.
Bibliography:Application Number: JP19910142436