SEMICONDUCTOR DEVICE

PURPOSE:To enable an IGBT to be shortened in turnoff time by a method wherein a semiconductor device provided with an IGBT is so constituted that a carrier recombining resistor is provided between the base and the emitter of a PNP transistor provided at an output side. CONSTITUTION:In a semiconducto...

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Bibliographic Details
Main Authors OTAKA SHIGEO, HOTTA KIYOMICHI
Format Patent
LanguageEnglish
Published 13.11.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable an IGBT to be shortened in turnoff time by a method wherein a semiconductor device provided with an IGBT is so constituted that a carrier recombining resistor is provided between the base and the emitter of a PNP transistor provided at an output side. CONSTITUTION:In a semiconductor device provided with a bipolar MOS composite transistor (IGBT) which is a metal oxide film semiconductor field effect transistor with a hole injection emitter provided at its drain, an excessive carrier recombining resistor 15 is provided between the base and the emitter of a PNP transistor provided at an output side. The resistor 15 concerned is formed of an N<->-type region 16 provided onto the primary surface of a semiconductor substrate 1. A resistor electrode 17 formed on the N<->-type region 16 and a collector electrode 11 are electrically connected together with a conductive wire or the like. By this setup, a collector current can be made small in trailing phenomenon when it is low in intensity, so that a semiconductor device of this design can be shortened in switching time.
Bibliography:Application Number: JP19910095501