FIELD EFFECT TRANSISTOR WITH INTERNAL MATCHING CIRCUIT

PURPOSE:To increase input and output impedance, to reduce a loss in an external matching circuit and to attain high output and broad band for the infernal matching circuit by providing metallized patterns to the circuit asymmetrically. CONSTITUTION:Two FET chips 2, an input side matching circuit cer...

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Bibliographic Details
Main Author SHIOZAKI OSAMU
Format Patent
LanguageEnglish
Published 11.11.1992
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
WAVEGUIDES
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Summary:PURPOSE:To increase input and output impedance, to reduce a loss in an external matching circuit and to attain high output and broad band for the infernal matching circuit by providing metallized patterns to the circuit asymmetrically. CONSTITUTION:Two FET chips 2, an input side matching circuit ceramic board 3 and an output side matching circuit ceramic board 4 are mounted on a package 1. Matching circuit metallized patterns 5, 6 are formed on the ceramic boards 3, 4 and the metallized patterns 5, 6 are not horizontally symmetrical with respect to input and output axes A-B, but lambda/4 lines 7, 8 are added to one metallized pattern in comparison with the other metallized pattern. An RF signal applied to an input side external lead 10 is driven while being branched into the two chips and the signal inputted with a phase difference of 180 deg. by the lambda/4 line is subject to further phase difference of 180 deg. by the lambda/4 line of the output pattern 6 of the chip 2, resulting that the signal is in phase and then the RF signals are synthesized at an output side external lead 11.
Bibliography:Application Number: JP19910001387