SOLID STATE IMAGE PICKUP ELEMENT

• Main Author: TASHIRO KAZUAKI
• Format: Patent
• Language: English
• Published: 03.02.1992
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To form potential barrier between pixels, prevent running of carrier between pixels and prevent leak of light into the lower circuit by providing light shielding Schottky electrode between pixel electrodes. CONSTITUTION:The incident light through the ITO film 10 generates carrier within the photoconductive film 8, hole is extracted from the ITO film 10 through the p<+> type hydrogentated amorphous silicon film 9 and electrons reach the pixel electrode 7 running through the photoconductive film 8. The accumulated charges are transferred to CCD 11 through the gate 12 when a pulse voltage is applied to the CCD electrode 3 and are then transferred sequentially to an external circuit by the CCD. In this timing, the light shielding Schottky electrode 15 is set to almost the same potential as the p<+> type layer and a potential barrier which prevent running of electrons is formed between adjacent pixels. As a result, the carrier generated in the pixel B never flow into the pixel A and flow of carrier to the pixel electrode 7' from the pixel electrode 7 can also be prevented. Moreover, generation of leak current within the lower circuit can also be prevented.