ACTIVE MATRIX DEVICE
PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate of a transistor(TR) into a binary signal corresponding to a source potential. CONSTITUTION:The low-level potential of a scanning line potent...
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Format | Patent |
Language | English |
Published |
27.10.1992
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Abstract | PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate of a transistor(TR) into a binary signal corresponding to a source potential. CONSTITUTION:The low-level potential of a scanning line potential 11 is set to 11bp when a signal line potential 13 controlled in a last selection period is higher than a common electrode potential or to 11bn when smaller. Consequently, the range 21 of a nonselection voltage applied between the gate and source of the TR can be compressed as compared with a conventional driving method and set to a sufficiently small range of the drain current. A sufficient OFF characteristic is obtained for both the positive and negative potentials by an electronic device which performs the AC driving of the source potential of the TR like an active matrix liquid crystal display device which uses a TN mode and the display characteristic of the liquid crystal display device can be improved. This is effective to, specially, a TFT using polysilicon, etc., as a channel material. |
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AbstractList | PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate of a transistor(TR) into a binary signal corresponding to a source potential. CONSTITUTION:The low-level potential of a scanning line potential 11 is set to 11bp when a signal line potential 13 controlled in a last selection period is higher than a common electrode potential or to 11bn when smaller. Consequently, the range 21 of a nonselection voltage applied between the gate and source of the TR can be compressed as compared with a conventional driving method and set to a sufficiently small range of the drain current. A sufficient OFF characteristic is obtained for both the positive and negative potentials by an electronic device which performs the AC driving of the source potential of the TR like an active matrix liquid crystal display device which uses a TN mode and the display characteristic of the liquid crystal display device can be improved. This is effective to, specially, a TFT using polysilicon, etc., as a channel material. |
Author | INAMI TAKASHI |
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Notes | Application Number: JP19910069972 |
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PublicationYear | 1992 |
RelatedCompanies | SEIKO EPSON CORP |
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Snippet | PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate... |
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SubjectTerms | ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY EDUCATION FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
Title | ACTIVE MATRIX DEVICE |
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