ACTIVE MATRIX DEVICE
PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate of a transistor(TR) into a binary signal corresponding to a source potential. CONSTITUTION:The low-level potential of a scanning line potent...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.10.1992
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To decrease the drain current in a nonselection period and to improve element characteristics by converting a scanning signal to be applied to the gate of a transistor(TR) into a binary signal corresponding to a source potential. CONSTITUTION:The low-level potential of a scanning line potential 11 is set to 11bp when a signal line potential 13 controlled in a last selection period is higher than a common electrode potential or to 11bn when smaller. Consequently, the range 21 of a nonselection voltage applied between the gate and source of the TR can be compressed as compared with a conventional driving method and set to a sufficiently small range of the drain current. A sufficient OFF characteristic is obtained for both the positive and negative potentials by an electronic device which performs the AC driving of the source potential of the TR like an active matrix liquid crystal display device which uses a TN mode and the display characteristic of the liquid crystal display device can be improved. This is effective to, specially, a TFT using polysilicon, etc., as a channel material. |
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Bibliography: | Application Number: JP19910069972 |