MANUFACTURE OF MAGNESIUM BORATE THIN FILM

• Main Authors: YAMANAKA SEIJI, YONEZAWA MASA
• Format: Patent
• Language: English
• Published: 09.10.1992
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; ORGANIC CHEMISTRY; PERFORMING OPERATIONS; SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE

PURPOSE:To form a magnesium borate thin film with high purity and <=1mum thickness usable as a dielectric film or a thin film for a hybrid on a substrate by using an inexpensive and easily available starting raw material. CONSTITUTION:Magnesium oxide is brought into reaction with acetylacetone in alcohol to prepare an alcohol soln. of bisacetylacetonanomagnesium, and diboron trioxide is brought into reaction with alcohol to prepare a soln. of boron alkoxide {shown by a general formula B(OR)3; in the formula, R denotes 2 to 4C alkyl groups}. Both solns. are mixed to regulate the molar ratio of Mg and B to 3:2, and the surface of a substrate is coated with a coating soln. obtd. by mixing the above mixed soln. with a prescribed amt. of carboxylic acid to form a coated film. This substrate is subjected to dry heat treatment to form a compound oxide precursory body of boron and magnesium, and this compound oxide precursory body is baked at 700 to 1000 deg.C to obtain a magnesium borate thin film.