CHARGE-COUPLED DEVICE

PURPOSE:To shorten the transfer distance in an output part and to contrive the improvement of the transfer efficiency by a method wherein in a CCD of a structure, wherein a transfer channel region is narrowed toward the output part, the transferred charge is made to concentrate in the central part o...

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Bibliographic Details
Main Author ODA HIDETSUGU
Format Patent
LanguageEnglish
Published 06.10.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To shorten the transfer distance in an output part and to contrive the improvement of the transfer efficiency by a method wherein in a CCD of a structure, wherein a transfer channel region is narrowed toward the output part, the transferred charge is made to concentrate in the central part of the channel region. CONSTITUTION:In a CCD, which has an N-type transfer channel 1 encircled with a channel stopper 2 and transfer electrodes 3a, 3b to 5a and 5b and detects a signal charge by an FDA method (a floating diffusion method), a region having a potential well made deeper than that of the part other than the center of the transfer channel region 1 is provided in the center of the region 1 in a width roughly equal with the width W of a floating diffused layer 6. As a method of deepening the potential well, the impurity concentration of the part for deepening the potential well, for example, is increased.
Bibliography:Application Number: JP19910068866