PHOTOMASK AND ITS MANUFACTURE

PURPOSE:To improve the accuracy of pattern transfer of a photomask for phase shift by constituting the phase shifter of a material having low refractive index. CONSTITUTION:A photomask M1 for phase shift has a phase shifter 2 comprising low-refractive index material such as fluorine-contained resin...

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Bibliographic Details
Main Authors SUGIMOTO ARITOSHI, KATO TAKESHI, NOZAKI KATSUHIRO
Format Patent
LanguageEnglish
Published 25.09.1992
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To improve the accuracy of pattern transfer of a photomask for phase shift by constituting the phase shifter of a material having low refractive index. CONSTITUTION:A photomask M1 for phase shift has a phase shifter 2 comprising low-refractive index material such as fluorine-contained resin or the like. The phase shifter 2 is formed by applying a fluorine-contained resin on the surface of the photomask M1 by spin coating and then etching the resin.
Bibliography:Application Number: JP19910030846