ION BEAM MACHINING METHOD

PURPOSE:To perform accurate removal processing by performing fine processing relating to an LSI such as a defect of a mask without inflicting the damage on a part other than correcting part. CONSTITUTION:The correction area on a substrate (14) which has a fine circuit pattern is positioned by contro...

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Bibliographic Details
Main Authors MIYAUCHI TAKEOKI, HONGO MIKIO, MITANI MASAO
Format Patent
LanguageEnglish
Published 07.09.1992
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Summary:PURPOSE:To perform accurate removal processing by performing fine processing relating to an LSI such as a defect of a mask without inflicting the damage on a part other than correcting part. CONSTITUTION:The correction area on a substrate (14) which has a fine circuit pattern is positioned by controlling positioning means (15 and 21) and a detector (17) detects secondary charged particles obtained from the correction area with a converged scanning and irradiating ion beam; and this charged particle image is displayed on a display means (19) to perform a correction place setting process wherein the scanning range of the converged ion beam is set as an accurate correction plate for the removal processing over a look at an image of the correction area and removal processing wherein the irradiation intensity and irradiation time of the converged ion beam are controlled corresponding to the kind of the correction place by controlling a scanning power source (12) according to the command of the set scanning range and only the correction place is scanned and irradiated with the ion beam converged by electrostatic lenses (9 and 13) by driving a deflecting electrode (11).
Bibliography:Application Number: JP19910096768