MANUFACTURE OF SEMICONDUCTOR SUBSTRATE

PURPOSE:To prevent deterioration in the characteristic of a semiconductor element such as deterioration in a breakdown-strength characteristic, a drop in a current-amplification factor or the like when the semiconductor element is formed on a semiconductor substrate after an epitaxial film has been...

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Bibliographic Details
Main Author NINOMIYA MASAHARU
Format Patent
LanguageEnglish
Published 02.09.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent deterioration in the characteristic of a semiconductor element such as deterioration in a breakdown-strength characteristic, a drop in a current-amplification factor or the like when the semiconductor element is formed on a semiconductor substrate after an epitaxial film has been grown on the semiconductor substrate which contains high-concentration impurities locally or wholly. CONSTITUTION:A first-layer epitaxial layer is formed while a prescribed film- formation temperature is being lowered from a high temperature; then, a second- layer epitaxial layer is formed at a prescribed film-formation temperature. An autodoping operation from a high-concentration impurity region is prevented, an epitaxial film which is homogeneous and whose characteristic is excellent is obtained and the effective thickness of the epitaxial film is not reduced.
Bibliography:Application Number: JP19910031571