VOLTAGE-DIVIDING CIRCUIT

• Main Author: OBATA HIROYUKI
• Format: Patent
• Language: English
• Published: 27.01.1992
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; CODE CONVERSION IN GENERAL; CODING; DECODING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To realize a high speed and a high accuracy simultaneously by a method wherein a region in which a resistance element composed of a diffusion- layer region whose conductivity type is opposite to that of a semiconductor substrate and a semiconductor well region near it are removed and this circuit is constituted. CONSTITUTION:The following are provided: a P-type semiconductor substrate 1; a P-well 2 which is formed on its surface and whose impurity concentration is high; and resistance elements RN0 to RNn composed of an N<+> diffusion-layer region. The elements RN0 to RNn are connected in series between reference- voltage terminals +VREF and -VREF. An output VOUT is taken out from connecting points C1 to Cn of the elements RN0 to RNn via N-channel MOSFET' s N1 to Nn and P-channel MOSFET's P1 to Pn which act as switching elements. A region in which the elements RN0 to RNn composed of the N<+> diffusion-layer region and the P-well 2 near them are removed. As a result, a junction capacity between the elements RN0 to RNn and the substrate 1 is made small, and the bias dependence of a resistance value is made small. A high speed and a high accuracy can simultaneously be realized.