METHOD FOR OCCLUDING TRACE GAS REMAINING IN VACUUM VESSEL

PURPOSE:To conveniently and easily remove the trace gas remaining in a vacuum vessel and to improve the quality of a vapor-deposited film by setting Ti capable of adsorbing oxygen, nitrogen, etc., in the plasma region in the vessel and heating the Ti at a specified temp. CONSTITUTION:A vapor-deposit...

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Bibliographic Details
Main Author TARUYA YOSHIO
Format Patent
LanguageEnglish
Published 11.08.1992
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Summary:PURPOSE:To conveniently and easily remove the trace gas remaining in a vacuum vessel and to improve the quality of a vapor-deposited film by setting Ti capable of adsorbing oxygen, nitrogen, etc., in the plasma region in the vessel and heating the Ti at a specified temp. CONSTITUTION:A vapor-deposition metal 17 such as Ti in a furnace 7 is heated, melted and vaporized in a vacuum vessel 6 evacuated by a vacuum pump 9. A plasma source gas 1 is energized by the power source 5 consisting of a cathode 2, a magnet 3, a magnetic coil 4, etc., and supplied to form plasma regions 13 and 14, and the vaporized molecule is excited and deposited on a sample 12 to form a film of Ti, etc. In this case, a metallic sheet 16 with the surface activated and capable of adsorbing or occluding gaseous O2 and N2 is insulatedly held in the plasma regions 13 and 14 through a ceramic spacer 15. The sheet 16 is heated to a temperature from 50 deg.C to the m.p. through the plasma, etc. Consequently, the trace gas remaining in the vessel 6 is occluded, and a highquality vapor-deposited film is obtained.
Bibliography:Application Number: JP19900412158