ION IMPLANTATION DEVICE

• Main Author: IMAIZUMI EIJI
• Format: Patent
• Language: English
• Published: 07.08.1992
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To neutralize electrified ions completely by arranging an electron current control device to control electron quantity to neutralize the ions electrified on a semiconducting substrate. CONSTITUTION:A semiconducting substrate is housed in a chamber 2, and an ion gun 1 generates ions to be implanted into one main surface of this substrate, and electrons are generated from an electron gun 3 so as to neutralize the ions electrified on the substrate. Here, an electron current control circuit 11 is connected to a vacuum gage 10 to measure degree of vacuum in the chamber 2, and also controls flow rate of the electrons generated by means of the electron gun 3 according to the degree of vacuum in the chamber 2. An emission electric current to flow into a cathode of the electron gun 3 is set to flow abundantly as the degree of vacuum rises while following up the degree of vacuum. Thereby, the rise in the degree of vacuum and the generation of the ions can be neutralized by outgassing from an organic material coat by showering the electrons more abundantly.