PURIFICATION OF POTASSIUM TANTALUM FLUORIDE

PURPOSE:To obtain highly purified potassium tantalum fluoride containing a slight radioactive element or metal of high melting point by dissolving crude potassium tantalum fluoride in a hydrofluoric acid solution at a specific temperature range and cooling the solution to below normal temperature to...

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Bibliographic Details
Main Authors NISHIMURA EIJI, SHINDO YUICHIRO, KUROKI MASAMI
Format Patent
LanguageEnglish
Published 24.01.1992
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain highly purified potassium tantalum fluoride containing a slight radioactive element or metal of high melting point by dissolving crude potassium tantalum fluoride in a hydrofluoric acid solution at a specific temperature range and cooling the solution to below normal temperature to recrystallize. CONSTITUTION:Crude potassium tantalum fluoride is poured into hydrofluoric acid or a mixed solution containing hydrofluoric acid and resultant solution is heated to 50-95 deg.C, then cooled to below 20 deg.C. Potassium tantalum fluoride crystal re-crystallized by cooling is filtrated and sufficiently washed to become pH5-6 preferably in an alkaline solution, e.g., a solution having >=9 of pH, then the recrystallized crystal is dried at 140-300 deg.C.
Bibliography:Application Number: JP19900123021