CHARGED-PARTICLE BEAM TREATMENT METHOD AND DEVICE THEREOF

• Main Authors: HARAICHI SATOSHI, SHIMASE AKIRA, AZUMA JUNZO, TAKAHASHI TAKAHIKO, ITO FUMIKAZU, MORI JUNICHI
• Format: Patent
• Language: English
• Published: 03.07.1992
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To make it possible to perform a highly reliable processing even on a complicated element and to make it possible to conduct all the processes of the processing in a short time by a method wherein a charged-particle beam treatment method is performed so as to have a process for treating the element using gas obtainable by mixing a plurality of reaction process gases as reaction process gas. CONSTITUTION:In a charged-particle beam treatment method, wherein a charged-particle beam 2 is emitted on a material 12 to be processed in a reaction process gas atmosphere, reaction process gas is made to react locally in the emitted part of the beam 2 by the emission energy of the beam 2 and an etching treatment of the material 12 is at least accompanied, the treatment method is performed so as to have a process for treating the material 12 using gas obtainable by mixing a plurality of reaction gases as the above reaction process gas. For example, the gas obtainable by mixing the plurality of the above reaction process gases consists of the mixed gas of etching gas a CVD gas and a charged--particle treatment is performed in such a way that it consists of a reactive etching of a material 12 to be processed, which is performed locally in the emitted part of a charged-particle beam 2, and a deposition, in which a prescribed substance film is selectively deposited on a prescribed region on the material 12 by a CVD method.