PHOTOMASK BLANK, PHOTOMASK, AND MANUFACTURE OF PHOTOMASK

PURPOSE:To enhance precision in patterning in an etching stage by laminating a tungsten film and chromium oxide film in this order to form a 2-layer structure light-shielding thin film. CONSTITUTION:The 2-layer structure light-shielding thin film 2 is formed by laminating the tungsten film 2a and th...

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Bibliographic Details
Main Authors YOSHIDA RISABURO, MURAKI AKIRA
Format Patent
LanguageEnglish
Published 22.01.1992
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PURPOSE:To enhance precision in patterning in an etching stage by laminating a tungsten film and chromium oxide film in this order to form a 2-layer structure light-shielding thin film. CONSTITUTION:The 2-layer structure light-shielding thin film 2 is formed by laminating the tungsten film 2a and the chromium oxide film 2b in this order on a conductive substrate 1 made of an optional optically transparent material, such as soda lime glass, borosilicate glass, quartz glass, rock crystal, or sapphire. It is necessary to use the light-shielding thin film having an optical density to shield the light in the wavelength region to which the photosensitive resin to be used is sensitive, thus permitting a fine pattern high is precision to be obtained.
Bibliography:Application Number: JP19900123382