THIN-FILM TRANSISTOR

PURPOSE:To prevent the deterioration of an on current with lapse of time and the change of a threshold voltage with lapse of time by providing an impurity semiconductor layer having the conduction type reverse from the conduction type of source and drain electrodes so as to cover the whole or part o...

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Bibliographic Details
Main Author INAMI TAKASHI
Format Patent
LanguageEnglish
Published 01.07.1992
Subjects
ADVERTISING
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PURPOSE:To prevent the deterioration of an on current with lapse of time and the change of a threshold voltage with lapse of time by providing an impurity semiconductor layer having the conduction type reverse from the conduction type of source and drain electrodes so as to cover the whole or part of channel parts and to come into contact with the substrate side boundary of the channel layers. CONSTITUTION:A substrate 101 is a glass substrate or quartz substrate having light transmissivity and process heat resistance. The layer to the directly deposited on the substrate 101 is P type polysilicon which is patterned to an island shape and is formed as a base layer 102. The nearly intrinsic polysilicon layer deposited in contact with the base layer 102 is also patterned on the inner side of the base layer and is formed as the channel layer 103. This patterning is executed for shielding the substrate side of the channel layer with the base layer and prevents the conduction by the photocurrent of the source and drain electrodes and the channel parts are simultaneously light- shielded at this time. The base layer 102 is provided in such a manner. The deterioration of the on-current with lapse of time and the change of the threshold voltage with lapse of time are prevented.
Bibliography:Application Number: JP19900315421