SEMICONDUCTOR DEVICE

PURPOSE:To provide an InGaAs HEMT(high electron mobility transistor) with high reverse breakdown voltage by forming a lightly-doped InGaAs layer underneath a gate electrode. CONSTITUTION:An InGaAs HEMT includes a semi-insulating InP substrate 1, on which are sequentially formed an undoped InAlAs buf...

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Bibliographic Details
Main Author SHIODA MASAHIRO
Format Patent
LanguageEnglish
Published 02.06.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To provide an InGaAs HEMT(high electron mobility transistor) with high reverse breakdown voltage by forming a lightly-doped InGaAs layer underneath a gate electrode. CONSTITUTION:An InGaAs HEMT includes a semi-insulating InP substrate 1, on which are sequentially formed an undoped InAlAs buffer layer 2, an undoped InGaAs channel layer 3, an undoped InAlAs spacer layer 4, an electron donating layer 5 of Si-doped InAlAs, an undoped InAlAs barrier layer 6, an undoped InGaAs Schottky layer 7, and a contact layer 8 of Si-doped InGaAs. A gate electrode 13 is formed on a central area of the Schottky layer 7. This HEMT has a high reverse breakdown voltage because the layer underneath the gate electrode is the high-quality undoped InGaAs Schottky layer that does not have lots of deep impurity levels.
Bibliography:Application Number: JP19900286405