PATTERN PROCESSING METHOD

PURPOSE:To prevent etching defects after reactive ion etching(RIE) and improve the precision of the formation pattern by shifting the focus during exposure. CONSTITUTION:After coating the surface of the SiO2 process substrate 2 with a g-line positive photoresist and baking on a hot plate, a speciall...

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Bibliographic Details
Main Author KISHIMURA SHINJI
Format Patent
LanguageEnglish
Published 02.06.1992
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent etching defects after reactive ion etching(RIE) and improve the precision of the formation pattern by shifting the focus during exposure. CONSTITUTION:After coating the surface of the SiO2 process substrate 2 with a g-line positive photoresist and baking on a hot plate, a specially designed reticule and g-line stepper with a 0.54 N.A. (lens opening) are used and the pattern is transferred after shifting the focus 0.5mum from the best focus point in the direction of shortening the distance between the process substrate 2 and the lens. After that, when the post exposure bake is completed, the development process is performed and a resist pattern l is obtained. By shifting the focus during exposure in this way, the more minute the pattern is, the more possible it is to taper resist patterns and minimize the microloading effect during RIE processing. As a result, the occurrence of etching defects can be prevented and the precision of the formation pattern can be increased.
Bibliography:Application Number: JP19900286374