NEGATIVE TYPE PHOTOSENSITIVE COMPOSITION

PURPOSE:To allow lithography of a high resolving power to be executed by short-time exposing by using a specific compd. as a crosslinking agent. CONSTITUTION:The compd. expressed by formula I and/or formula II is used as the crosslinking agent. In the formula I, R denotes an alkyl group; A denotes a...

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Bibliographic Details
Main Authors TAKAHASHI NORIAKI, ISHIGURO TOMOYO, SHINOZAKI MIKA, OCHIAI TAMEICHI
Format Patent
LanguageEnglish
Published 30.04.1992
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To allow lithography of a high resolving power to be executed by short-time exposing by using a specific compd. as a crosslinking agent. CONSTITUTION:The compd. expressed by formula I and/or formula II is used as the crosslinking agent. In the formula I, R denotes an alkyl group; A denotes an alkyl group which may be substd., alkenyl group, aryl group or 5- to 6-membered arom. heterocyclic group; B denotes a hydrogen atom or -CH2OR ; R denotes an alkyl group. In the formula II, X denotes a bivalent org. group; D to D respectively independently denote a hydrogen atom or -CH2OR ; R denotes an alkyl group; (n) denotes 0 or 1; at least two of D to D are not the hydrogen atoms. The lithography of the high revolving power is executed by the short-time exposure in this way by using the light of the wavelength of a deep UV region.
Bibliography:Application Number: JP19900249255