NEGATIVE TYPE PHOTOSENSITIVE COMPOSITION

PURPOSE:To execute exposing by using light of the wavelength of a deep UV region and to allow lithography of a high resolving power by short-time exposing by consisting a photoacid generator of a specific benzene deriv. CONSTITUTION:This compsn. contains an alkaline-soluble resin, the photoacid gene...

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Bibliographic Details
Main Authors TAKAHASHI NORIAKI, ISHIGURO TOMOYO, SHINOZAKI MIKA, OCHIAI TAMEICHI
Format Patent
LanguageEnglish
Published 09.04.1992
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Summary:PURPOSE:To execute exposing by using light of the wavelength of a deep UV region and to allow lithography of a high resolving power by short-time exposing by consisting a photoacid generator of a specific benzene deriv. CONSTITUTION:This compsn. contains an alkaline-soluble resin, the photoacid generator and the crosslinking agent of the alkaline-soluble resin acting under an acidic condition. This photoacid generator is the benzene deriv. expressed by formula I. In the formula I, X to X respectively independently denote a hydrogen atom, chlorine atom, bromine atom or an alkyl group which may have a substituent; Y denotes an alkyl group; (n) denotes 0 to 3 integer; (m) denotes 1 to 3 integer. At least one of X to X denote a chlorine atom or bromine atom. The exposing by using the light of the deep UV region is executed in this way and the resist having the good pattern profile which can correspond to half-micron lithography is obtd.
Bibliography:Application Number: JP19900227581