DEVICE AND METHOD FOR TREATING SEMICONDUCTOR

PURPOSE:To rotate a substrate with no mechanical contact and without producing particles by providing a plurality of radially arrayed gas blowing out pipes and obliquely blowing a heated gas upon the lower surface of a semiconductor substrate through gas introducing ports provided to a reactive tank...

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Bibliographic Details
Main Authors OKUNO MASAKI, SATO YASUHISA
Format Patent
LanguageEnglish
Published 02.04.1992
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Summary:PURPOSE:To rotate a substrate with no mechanical contact and without producing particles by providing a plurality of radially arrayed gas blowing out pipes and obliquely blowing a heated gas upon the lower surface of a semiconductor substrate through gas introducing ports provided to a reactive tank. CONSTITUTION:Gas blowing out pipes 3 are horizontally extended below a substrate holder 6 and protruded from the upper surface of the holder 6 after their directions are turned upward. All of the gas blowing out ports 3a at the front ends of the pipes 3 are obliquely fitted to the surface of the holder 6 at an angle theta. Accordingly, when a reactive gas is introduced from a gas introducing pipe 5, the gas is obliquely blown upon the surface of the holder 6 from the ports 3a. When a semiconductor substrate 1 is placed horizontally on the holder 6, the substrate 1 is brought upward by the gas and starts to rotate in the direction shown by the arrows due to the viscosity between the gas and the lower surface of the substrate 1.
Bibliography:Application Number: JP19900217842