PLASMA ETCHING METHOD

PURPOSE:To prevent a contact hole from increasing its resistance by adding xenon gas to reactive gas, and conducting a plasma etching. CONSTITUTION:When xenon gas is added to reactive gas such as CF4, CHF3, etc., the CF4, CHF3, etc., discharge inner energy to the xenon in the case of collision with...

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Bibliographic Details
Main Author KOSHIO ATSUSHI
Format Patent
LanguageEnglish
Published 03.04.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent a contact hole from increasing its resistance by adding xenon gas to reactive gas, and conducting a plasma etching. CONSTITUTION:When xenon gas is added to reactive gas such as CF4, CHF3, etc., the CF4, CHF3, etc., discharge inner energy to the xenon in the case of collision with the xenon to alleviate the collision of the CF3 ions with the surface of a substrate, since the CF4, CHF3, etc., are quasi-stable state and the energy is higher than the ionized energy of the xenon. Since the ion energy of the xenon is smaller than that of the CF3 ions, CFX remaining on the surface of the substrate scarcely enter the surface of the substrate. As a result, a contact hole provided in the substrate is prevented from increasing resistance to form a semiconductor device having high reliability.
Bibliography:Application Number: JP19890214376