JPH03648B

• Main Authors: MORI SHIGEKAZU, UCHIMURA KUNIHARU, KATAOKA MUTSUO
• Format: Patent
• Language: English
• Published: 08.01.1991
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; CONTROLLING; ELECTRICITY; PHYSICS; REGULATING; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

PURPOSE:To make the MOS integration possible, by detecting voltages between respective bases and emitters of NPN transistors (TR) different in current density and the voltage difference between them to determine a reference voltage output and a temperature coefficient in a summing amplifier due to a capacity ratio. CONSTITUTION:NPN TRs 3 and 4 different in current density are connected between the first potential point VIN1 and an earth potential E, and emitters are connected to drains of MOSTRs 5 and 6. The emitter and the base of the TR4 are connected to the first capacity C1 through the first changeover switch S1, and emitters of TRs 3 and 4 are connected to the second capacity C2 through the second changeover switch S2, and capacities C1 and C2 are connected to the inverted terminal of a differential amplifier A2. The noninverted terminal of the amplifier A2 is grounded, and the thrid capacity C3 and a changeover switch S3 are connected between the output terminal and the inverted terminal of the amplifier A2, and the output of the amplifier A2 is applied to a differential amplifier A3 through the fourth changeover switch S4. These switches S1- S4 are operated by the control of a controlling circuit CC, and a reference voltage and a temperature coefficient are determined by the capacity ratio, thus making the MOS integration possible.