SEMICONDUCTOR DEVICE

• Main Author: SHIODA MASAHIRO
• Format: Patent
• Language: English
• Published: 13.03.1991
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To enable a high output semiconductor device having excellent low noise characteristics capable of high speed operation to be manufactured by a method wherein a metallic thin film is formed on a semiconductor layer between a source electrode and a gate electrode as well as between a drain electrode and the gate electrode. CONSTITUTION:A very thin metallic film 5 is provided on the surface of a semiconductor layer between a source electrode 7 and a gate electrode 9 as well as between a drain electrode 8 and the gate electrode 9 so as to lower the level of the band bending on the surface. Accordingly, two-dimensional electron gas 11 will not be modulated by the surface depletion layer 12 between the source electrode 7 and the gate electrode 9 as well as between the drain electrode 8 and the gate electrode 9 so that the two-dimensional electron gas concentration almost three times of that of the conventional high electron mobility transistor(HEMT) may be attained so as to lower the source resistance. Through these procedures, the source resistance can be lowered without increasing the capacitance between source and gate thereby enabling a high output semiconductor device having excellent low noise characteristics capable of high-speed operation to be manufactured.