PLASMA TREATING DEVICE

• Main Author: OIWA KIYOSHI
• Format: Patent
• Language: English
• Published: 18.12.1991
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain the plasma treating device with the plasma generating efficiency and film quality enhanced and the film thickness distribution improved by generating a potential negative with respect to plasma on a substrate by an RF electrode to work the substrate surface. CONSTITUTION:A subsolenoid 61 is arranged on the rear side of a substrate 11 coaxially with an exciting solenoid 6 to form a resonance magnetic field in a plasma generating chamber 3, and an RF power source 12 is connected to the substrate 11. When a thin film of Si3N4, etc., is formed, gaseous N2 is introduced 4, further introduced into the plasma generating 2 chamber 3, ionized by the electric field of the obtained microwave and the resonance magnetic field generated in the chamber 3 by the solenoid 6 and converted to plasma. The plasma is sent into a treating chamber 9 along the line of magnetic force generated by the solenoid 6. Meanwhile, the plasma activating gaseous monosilane while proceeding to the chamber 9 tends to rapidly turn along the line of magnetic force forming a cusp field. However, the moving direction of the ion is not changed along the line of magnetic force and accelerated toward the substrate by the negative floating potential produced on the substrate 11 to form a dense Si3N4 film on the substrate surface.