MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To provide a transistor with good quality and higher working voltage by implanting ions in two steps at different incident angles to form diffused source and drain. CONSTITUTION:At the first doping, ions are implanted in an oblique direction to a substrate 9 at 80% of the total dose required...

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Bibliographic Details
Main Authors FUJII EIZO, YOSHIDA MITSUGI
Format Patent
LanguageEnglish
Published 16.12.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To provide a transistor with good quality and higher working voltage by implanting ions in two steps at different incident angles to form diffused source and drain. CONSTITUTION:At the first doping, ions are implanted in an oblique direction to a substrate 9 at 80% of the total dose required to form source 22 and drain 23. Since a gate electrode 13 is projecting above the substrate surface, it makes shade 17 on part of the drain region 23, where ions do not reach. At the second doping, the remaining 20% is applied perpendicular to the substrate to dope the entire area including the shade 17. This completes the application of the whole required dose to the source and drain regions and results in the formation of a lightly-doped spacer region 28 between the drain 23 and the gate 13. Consequently, field concentration is prevented, and drain voltage can be increased.
Bibliography:Application Number: JP19900086583