SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To prevent the bonding of the exposed region of an insulating layer and H2O from occurring, and improve the sticking of a wiring, by forming an aperture part having a side wall protecting film by the RIE method. CONSTITUTION:A contact hole is formed at a part of a first insulating layer 22....

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Bibliographic Details
Main Author AKAISHI YOSHIO
Format Patent
LanguageEnglish
Published 11.12.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent the bonding of the exposed region of an insulating layer and H2O from occurring, and improve the sticking of a wiring, by forming an aperture part having a side wall protecting film by the RIE method. CONSTITUTION:A contact hole is formed at a part of a first insulating layer 22. Thereon Al is stuck, which comes into ohmic contact via the contact hole with the diffusion region of a semiconductor element or the like. Thus a first wiring 23 is formed. A second insulating layer 24 is an SiO2 film; a third insulating layer 25 is an SiO2 film which is spin-coated with SOG solution and turned into an inorganic state by heat treatment,; a fourth insulating layer 26 is an SiO2 film; a fifth insulating layer 28 is a PSG film or a BPSG film. Photo resist 31 is spread on the whole surface; an aperture is formed in the photo resist region corresponding with the contact region with the first wiring 23 and the second wiring 30. Then isotropic etching is performed by using delute HF solution. Finally the photo resist film 31 is again used, and etching is performed by RIE method, thus forming a first aperture part 27 and a second wiring 30.
Bibliography:Application Number: JP19900082525