ETCHING DEVICE

• Main Authors: KANEMITSU HIDEYUKI, HOSHINO EIICHI
• Format: Patent
• Language: English
• Published: 28.11.1991
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE:To obtain the etching device capable of controlling the variance in the line width due to various parameters and capable of controlling the line width with high precision by allowing the device to control etching with the intensity of light transmitted through a sample, namely the optical density of the sample. CONSTITUTION:A resist pattern is formed on a transmissible substrate as shown in the figure to obtain a sample 2. When the sample 2 is etched in a liq. etchant 4, the sample 2 is irradiated with the light from a light source 5. The light from the light source 5 is detected by a detection part 6 through the sample 2, however the light is weak at the detection part 6 at the start of etching. As the etching proceeds, only the substrate is left in the sample 2, and hence the intensity of the light to the detection part 6 is increased. Namely, the variation in the optical intensity of the sample 2 is detected by the light intensity detected at the detection part 6, and etching is finished when only the transparent substrate is left.