SEMICONDUCTOR DEVICE

PURPOSE:To improve breakdown strength between a source and a drain and reliability by separately forming a drain region formed in a substrate between a first gate electrode and a second gate electrode, and a channel stopped formed under an insulating film. CONSTITUTION:A drain region 5 formed in a s...

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Bibliographic Details
Main Author MIYATA KAZUAKI
Format Patent
LanguageEnglish
Published 24.10.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To improve breakdown strength between a source and a drain and reliability by separately forming a drain region formed in a substrate between a first gate electrode and a second gate electrode, and a channel stopped formed under an insulating film. CONSTITUTION:A drain region 5 formed in a substrate 1 between first and second gate electrodes 13a and 13b, and a channel stopper 3 formed under an insulating film 2 are provided, and the region 5 and the stopper 3 are separately formed. Since the region 5 and the stopper 3 are separately formed in this manner, a breakdown strength between the source 4 and drain 5 is determined according to a junction breakdown strength between the region 5 and the silicon substrate 1. Accordingly, a decrease in the junction breakdown strength due to direct contact of the high concentration region 5 of different conductivity type with the stopper 3 can be suppressed. Thus, the breakdown strength between the source and the drain is improved, and its reliability is improved.
Bibliography:Application Number: JP19900036662