PATTERN FORMING METHOD

• Main Author: URAYAMA KAZUHIKO
• Format: Patent
• Language: English
• Published: 07.10.1991
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To enhance dimensional stability and reproduction performance by disclosing the acid, generated by irradiation with radiation in a resist film and having catalyticaly acted for patterning the resist, in an atmosphere containing a basic gas to stop the catalytic action. CONSTITUTION:The patterns 12' and 13' are obtained in a silicon oxide film 12 and a polysilicone layer 13 by forming on a semiconductor substrate 11 those films 12, 13 by the CVD method, coating the layer 13 with the resist 14 containing a compound to be allowed to generate the acid by radiation irradiation, irradiating the resist 14 with the radiation 16 through a proper mask 15 in a laser exposure device, heat treating it on a hot plate, immediately disclosing it to an atmosphere containing gaseous ammonia, developing it to obtain a pattern 14', using it as a mask, and etching the films 12, 13, thus permitting the residue of the acid having finished the catalytic action in the resist patterning process to be treated by the NH3-containing atmosphere to prevent the catalytic action, consequently, dimensional stability and reproduction performance to be enhanced.