FILM TRANSISTOR

PURPOSE:To miniaturize a transistor by interposing underetching preventive films, which are hardly damaged by the etchant to electrode layers and are made of material excellent in the adhesion to barrier layers and the electrode layers, between the barrier layers and the source electrode and the dra...

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Bibliographic Details
Main Authors ASAI ICHIRO, YAMAMOTO SHIGERU, HIKIJI TAKETO
Format Patent
LanguageEnglish
Published 15.08.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To miniaturize a transistor by interposing underetching preventive films, which are hardly damaged by the etchant to electrode layers and are made of material excellent in the adhesion to barrier layers and the electrode layers, between the barrier layers and the source electrode and the drain electrode. CONSTITUTION:Underetching preventive films 12 and 13, which are hardly damaged by the etchant to electrode layers and are made of the material excellent in the adhesion to barrier layers 8 and 9 and the electrode layers, are interposed between the barrier layers 8 and 9 and the source electrode 6 and the drain electrode 7. In this case, the underetching preventive films 12 and 13 perform the actions of preventing the barrier layers from being under-etched by the etchant for the n<+>-Si layer, when etching the n<+>-Si layer so as to form the source electrode 6 and the drain electrode 7. Hereby, it becomes unnecessary to make the dimension of the transistor large in anticipation of underetching and miniaturization is made possible.
Bibliography:Application Number: JP19890326702