OXIDE SEMICONDUCTOR FOR THERMISTOR

PURPOSE:To provide semiconductor for glass-sealed thermistors having a low resistivity, a high thermistor constant, a small electrical charecteristic variation, and high accuracy with high yield by processing a compound consisting mainly of a specific cobalt oxide under a predetermined pressure at a...

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Bibliographic Details
Main Author HATA TAKUOKI
Format Patent
LanguageEnglish
Published 27.06.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
RESISTORS
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Summary:PURPOSE:To provide semiconductor for glass-sealed thermistors having a low resistivity, a high thermistor constant, a small electrical charecteristic variation, and high accuracy with high yield by processing a compound consisting mainly of a specific cobalt oxide under a predetermined pressure at a temperature lower than its sintering temperature. CONSTITUTION:A compound is provided which contains a main part of cobalt oxide of NaCl type having solid solution of lithium in its crystal grains. The compound is compressed in an active gas atmosphere under a pressure of 300 kgf/cm at a temperature 100-350 deg.C lower than the sintering temperature. Specifically, a composition of CO3O4, Li2CO3, CuO, and SiO2 is baked in a nitrogen gas flow at 1200-1300 deg.C for two hours. It is further processed in an argon gas atmosphere under 1000 kgf/cm at 950-1100 deg.C for an hour by a hot isostatic press. The oxide semiconductor for thermistors thus obtained has a low resistivity, high thermistor parameters, a small variation in electric characteristics, and a negative temperature coefficient.
Bibliography:Application Number: JP19890289509