SYNTHESIS OF DIAMOND USING PLASMA

PURPOSE:To contrive to improve the grow rate of diamond by generating plasma with an electric power whose amplitude is modulated. CONSTITUTION:A reaction chamber 4 is evacuated with an evacuator 5 and a plasma-generating gas such as Ar gas or H2 gas is fed into the evacuated reaction chamber from a...

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Bibliographic Details
Main Authors OKADA KATSUYUKI, MATSUMOTO SEIICHIRO, NAGASHIMA TAKASHI, MORIYOSHI YUSUKE
Format Patent
LanguageEnglish
Published 17.06.1991
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To contrive to improve the grow rate of diamond by generating plasma with an electric power whose amplitude is modulated. CONSTITUTION:A reaction chamber 4 is evacuated with an evacuator 5 and a plasma-generating gas such as Ar gas or H2 gas is fed into the evacuated reaction chamber from a gas-supplying device 6 through a valve 7. After the gas pressure is adjusted to a pressure of 10<-4> to 5X10 atmospheres, an electric power is supplied to the electrode of a plasma torch 1 from a DC electric source 2 to generate plasma in a modulation range of 100Hz-500kHz. A carbon source such as methane is fed into the plasma from a valve 7' on a substrate 3 comprising Mo, Si or Al2O3 heated to 350-1400 deg.C to deposit a diamond film having a desired thickness.
Bibliography:Application Number: JP19890280941