CHARGED PARTICLE BEAM LITHOGRAPHY

• Main Authors: ISHII KIYOSHI, MATSUDA KOREHITO
• Format: Patent
• Language: English
• Published: 11.06.1991
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent a resist layer from being irradiated with scattered charged particle beam, and obtain a written pattern with high precision, by controlling the acceleration voltage of charged particle beam to be lower than the valure at the time of scanning for a position detecting mark in the depth where the charged particle beam dose not reach the substrate of an object to be written at the time of pattern writing for the resist layer of the body to be written. CONSTITUTION:From an electron gun 13, an electron beam B2 having an acceleration voltage of (VH-VC) is again projected against an X-Y stage 12 by an acceleration voltage controlling voltage supplying circuit 32 based on a pattern writing acceleration voltage controlling power supply from a controlling circuit 20. At this time, differently from the scanning of a position detecting mark 3 with an electron beam B1, an objective system driving power supply is made to output power so as to add a pattern writing position detecting signal, and the beam is converged at the position of a resist layer 6 of an object 1 to be written. Further, according to a deflection signal for pattern writing, an X-Y deflection system 15 is driven by a deflection system driving circuit 25, in the manner in which the pattern writing of a pattern writing region of the resist layer 6 is performed with the converged electron beam B2.