MOLECULAR BEAM CRYSTAL GROWING DEVICE

• Main Author: YAMAMOTO TATSU
• Format: Patent
• Language: English
• Published: 21.01.1991
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To stably grow high-quality crystal for a long period by arranging a center-blanked disk between a base plate and the molecular-beam source cells and rotating the center-blanked disk when deposit is built-up on the rear surface of the center-blanked disk and removing the deposit by a cleaning mechanism. CONSTITUTION:A base plate 1 is horizontally arranged in a molecular-beam crystal growing device. A plurality of molecular-beam source cells 21, 22, etc., are arranged in the positions described hereunder in the lower part of the base plate 1. When these cells are rotated around the vertical axis passed through the base plate 1, these cells are mutually overlapped in the positions. Furthermore a center-blanked disk 3 is arranged between the base plate 1 and these cells 21, etc., so as to cover the opening parts of these cells 21, etc., when these cells are observed from the upper part. When molecular-beam crystal growth is performed and deposit is built-up on the rear surface of the disk 3, this disk 3 is rotated around the vertical axis by a rotating mechanism 4. The cutting tool 51 of a cleaning mechanism 5 is pressure-welded on the rear surface of the disk 3 and slid to peel deposit.