PLASMA TREATING DEVICE
PURPOSE:To prevent a malfunction based on deposits and to surely detect the end point of a plasma treatment by generating the plasma with microwaves and magnetic fields and setting the position of the prescribed magnetic field strength of electron cyclotron resonance conditions at the position near...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
01.05.1991
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To prevent a malfunction based on deposits and to surely detect the end point of a plasma treatment by generating the plasma with microwaves and magnetic fields and setting the position of the prescribed magnetic field strength of electron cyclotron resonance conditions at the position near a sample. CONSTITUTION:The gase introduced from a gas introducing port 7 into a quartz bell-jar 5 subjected to vacuum evacuation is converted to the plasma by the microwaves introduced via a waveguide 2 from a magnetron 1 and the magnetic fields impressed by electromagnetic coils 11, 12, by which the sample 5 is subjected to a treatment, such as etching. The light emission spectra in the system are observed by a spectroscope 14 connected by an optical fiber 13 to a lighting window 15 of the above-mentioned plasma treating device to detect the end point of the plasma treatment. The current values of the above- mentioned electromagnetic coils 11, 12 are changed to set the prescribed magnetic field strength to attain the electron cyclotron resonance conditions, for example, the position of 875G with respect to 2.45GHz microwave frequency at the position near the sample 5. Thus, the deposition of the polymerized in the bell-jar 4 near the lighting window 15 is prevented and the malfunction in the end point detection of the plasma treatment is averted. |
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Bibliography: | Application Number: JP19890238403 |