SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

PURPOSE:To reduce the reverse recovery time by providing a polyimide resin film as the passivation film at not a MOSFET division but a peripheral region. CONSTITUTION:A semiconductor element 1 contains a field limiting region 2 in the periphery and a MOSFET division 3 in side it. Its rectangular bla...

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Bibliographic Details
Main Authors ANDO AKIO, IIJIMA TETSUO, OTAKA SHIGEO
Format Patent
LanguageEnglish
Published 30.04.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce the reverse recovery time by providing a polyimide resin film as the passivation film at not a MOSFET division but a peripheral region. CONSTITUTION:A semiconductor element 1 contains a field limiting region 2 in the periphery and a MOSFET division 3 in side it. Its rectangular blanks at left-right edge centers are a gate (G) wire bonding pad 4 and a source (S) wire bonding pad 5, respectively. A polyimide resin film 29 is deposited on the field limiting region 2, but not on the MOSFET region 3. Therefore, even a semiconductor element whose passivation film is formed of polyimide resin can shorten the reverse recovery time of a built-in diode 30 constituted by an n<-> type epitaxial grown layer 11 and a p-type cell well 12 and attain the recovery of MOSFET thresh old values by irradiation with electron beams and by annealing treatment.
Bibliography:Application Number: JP19890240167