PATTERN FORMING METHOD

• Main Authors: SAITOU HIROYA, YAMAGUCHI HIROSHI, OKUDAIRA HIROAKI
• Format: Patent
• Language: English
• Published: 26.04.1991
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To eliminate the need for conductive films and to prevent the degradation in the S/N of a pattern at the time of exposing by boring a hole in a protective film by a focusing energy beam and depositing a metallic film by an electroless plating method into the hole, thereby correcting the defect. CONSTITUTION:An X-ray mask is formed by laminating a polyimide film 105, the pattern 104, and a polyimide film 103 of the protective film on a thin film 106 of BN. An Ni<+> ion beam is focused and the white spot defect part 101 of this mask is irradiated with this ion beam to remove the film 103 of the defect part 101 in the case of correction of the above-mentioned defect part. The Ni<+> ions are partly implanted to the film 105 at this time. The mask is then immersed into an electroless plating liquid 109 of Au and Au is deposited from the bottom by the substitution reaction of the Ni 107 of the base of the hole and the Au ions to form the Au film 109. The defect part is thus corrected. The wirings of an LSI, etc., are thus corrected by using the electroless plating method.